Self-limited growth of nanocrystals in phosphosilicate melts during cooling

In this Letter, we demonstrate that the spontaneous nanophase-separation can greatly enhance the heterogeneous nucleation in the investigated phosphosilicate melts. The two separated phases are found to be the phosphate-rich phase as the floppy domain and the silicate-rich phases as rigid phase. We found that sodium phosphate nanocrystals form in the phosphate-rich phase during melt cooling. The growth of these nanocrystals are self-limited, i.e., limited by the surrounding silicate-rich phase with higher viscosity, and hence lower ionic diffusion compared to the phosphate-rich phase. Our results show that the substitution of B₂O₃ or Al₂O₃ for partial Na₂O enhances the spontaneous nucleation, although the viscosity of silicate-rich matrix phase is increased by such substitution. This implies that the compositional substitution enhances nanophase separation and thereby lowers the activation energy for non-isothermal crystallization. This work indicates that nanophase separation is crucial for fabrication of transparent glass-ceramics from phosphosilicate melts.     

Tailoring the hydrophilic and hydrophobic reaction fields of the electrode interface on single crystal Pt electrodes for hydrogen evolution/oxidation reactions

Interfacial hydrophobic/hydrophilic reaction fields significantly affect various reactions at the electrode surface. The hydrogen evolution reaction (HER) and the hydrogen oxidation reaction (HOR) have been investigated on single crystal Pt electrodes modified with hydrophobic/hydrophilic cations and anion-exchange copolymers in alkaline solutions. In alkali metal hydroxide solutions, Pt (110) exhibits the highest HER/HOR activity in the low-index planes of Pt. On the low-index planes of Pt, the hydrophilicity of the alkali metal cation in the supporting electrolyte activates the HER/HOR depending on its hydration energy. Hydrophilic cations at the interface facilitate the extraction of hydrogen from the hydrated water. The modification of anion-exchange copolymers with a hydrophobic skeleton on Pt (110) further enhanced the HER/HOR activity. The hydrogen bonding network formed around the hydrophobic species facilitated the mobility of water molecules and the OH⁻ as the reactant/product of the HER/HOR. Appropriately forming hydrophilic and hydrophobic reaction fields at the interface improved the HER/HOR activity.     

Strain-rate dependence of surface/subsurface deformation mechanisms during nanoscratching tests of GGG single crystal

Constant- and varied-depth nanoscratching tests of GGG single crystal were carried out at different scratching velocities. The morphologies of the scratched grooves and chips were analysed using scanning electron microscope. The experimental results indicated that higher scratching velocity led to shallower penetration depth, shallower residual depth, and larger continuous chips. Increasing the scratching velocity could effectively improve the plasticity and reduce the brittle-to-ductile transition depth of GGG single crystal. Based on the contact stress and contact area between the analysed sample and Berkovich indenter, a model for predicting the penetration depth was developed, which took into account the strain rate effect and elastic recovery of materials. The model was verified using constant- and varied-depth nanoscratching tests, and the predicted and experimental results were in good agreement. Subsurface damage underneath the ductile surface was characterised using transmission electron microscope. The TEM results demonstrated that higher scratching velocity led to the slipping planes appearing in more directions, which prevented the generation of long slipping plane and reduced the depth of the damage layers. The plastic deformation of GGG at the scratching velocity of 100 μm/s was dominated by poly-crystalline nanocrystallites and amorphous phases, and was similar to that at the low scratching velocity. This study provided a fundamental understanding of the strain-rate dependence of surface/subsurface deformation mechanisms of GGG during ultra-precision machining.     

Correlation between growth behavior,internal stress distribution and properties of ZnO:Zn crystals grown by carbon-assisted chemical vapor transport

Internal stress and stress-related defects are considered as the major obstacles that significantly hinder the growth of high-quality ZnO-based crystals. In this work, high-crystalline-quality ZnO:Zn bulk crystals were successfully grown by carbon-assisted chemical vapor transport (CVT). Internal stress in the crystal was directly measured by a neutron beam from a reactor, and stress distributions along the radial direction at different depths were obtained. The stress, temperature, and flow fields in the growth system were simulated by the finite element (FE) method, and the results agreed with the neutron stress analysis. The etch pit density (EPD), Hall properties, and optical transmittances of different crystal regions were studied in detail, and the distribution trend of the crystal properties was consistent with that of internal stress and stress-related defects in the crystal. It is found that the unique temperature filed in the growth system causes the crystal to bend to a slightly convex toward the growth direction and gives rise to a driving force for structural defect formation. The + c and –c faces of the crystal are subjected to tensile and compressive stress, respectively. The maximum stress values are about 280 MPa and -291 MPa near the central regions of ±c faces, while the crystal periphery is basically free of internal stress. The region near the center of +c face has an EPD of 7.5 × 10³ cm^-2 and a transmittance of 79.2% at 800 nm wavelength, while the corresponding carrier concentration and mobility are 2.27 × 10¹⁷ cm^?3 and 159 cm²/V·s, respectively. By comparison, the crystal periphery has an EPD of 10² cm^-2 with an 80.5% transmittance at 800 nm, while the carrier concentration and mobility are 1.85 × 10¹⁷ cm^?3 and 184 cm²/V·s, respectively.     

一种可传输轨道角动量的螺旋光子晶体光纤北大核心

设计了一种基于阿基米德螺线的新型螺旋光子晶体光纤,该光纤以二氧化硅为基底材料,包层由24个螺旋臂组成,每个螺旋臂包含11个小空气孔,纤芯设有大空气孔,包层与纤芯中间的环形区域用于传输轨道角动量模式。该结构在1300~1800 nm波段上可支持22种轨道角动量模式稳定传输,在1550 nm波长下,有效折射率差最高可达2.89×10^(-3),色散系数最低可达66.4 ps/(nm·km),非线性系数最低可达2.17 W^(-1)·km^(-1),且1500~1600 nm波段上的色散值变化均小于15.15 ps/(nm·km)。此螺旋光子晶体光纤不仅结构简单,且具有低非线性、色散平坦的性能,为螺旋光子晶体光纤的设计提供了思路。     

Effect of electric field intensity on domain kinetics of Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

As one of the outstanding piezoelectric materials, relaxor-PbTiO₃ single crystal also exhibits promising electro-optic and nonlinear-optic properties. Therefore, it is vital to understand the domain switching kinetics not only for optimizing strain-mediated devices performance but also for fabricating optical waveguides and periodic domain structures in optical applications. In this work, domain switching kinetics in annealed and pre-poled PMN-0.38PT single crystal under different external electric field were studied. Polarization reversal can be accomplished only by c-domain nucleation and growth in the annealed sample where the formation of the ferroelastic domains is hindered. In pre-poled sample, 90° domain switching happened by 90° domain wall reorientation under low electric field while 180° domain switching is accomplished by two-step 90° domain switching and c-domain growth under high electric field. The results are important for modulating domain structure for strain mediated and optical devices.     

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Understanding surface kinetics of SiO₂ growth on single crystal SiC at elevated temperatures is crucial to fabricate high-performance SiC-based devices. However, the role of oxygen in the evolution mechanism of SiC surface at atomic scale has not been comprehensively elaborated. Here, we reveal the manipulation effect of oxygen on the competitive growth of thermal oxidation SiO₂ (TO-SiO₂) and thermal chemical vapor deposition SiO₂ (TCVD-SiO₂) on the 4H-SiC substrate at 1500 °C. TO-SiO₂ is formed by the thermal oxidation of SiC, in which the substrate undergoes layer-by-layer oxidation, resulting in an atomically flat SiC/TO-SiO₂ interface. TCVD-SiO₂ growth includes the sublimation of Si atoms, the reaction between sublimated Si atoms and reactive oxygen, and the adsorption of gaseous Si_xO_y species. A relatively high sublimation rate of Si atoms at SiC atomic steps causes the transverse evolution of the nucleation sites, leading to the formation of nonuniform micron-sized pits at the SiC/TCVD-SiO₂ interface. The low oxygen concentration favors TCVD-SiO₂ growth, whose crystal quality is much better than that of TO-SiO₂ due to the high surface mobility in the thermal CVD process. We further achieve the epitaxial growth of graphene on 4H-SiC in an almost oxygen-free reaction atmosphere. Additionally, ReaxFF reactive molecular dynamic simulation results illustrate that the decrease in oxygen concentration can promote the growth kinetics of SiO₂ on single crystal SiC from being dominated by thermal oxidation to being dominated by thermal CVD.     

阴极铜剥片装置的优化改造

针对阴极剥片机组核心区域剥片装置故障高的问题 , 结合生产操作 , 以及实际检修过程 , 从设备的角度分析剥片装置故障率高的主要原因 , 根据原因提出设备改进方案 , 降低剥片装置故障率，保证剥片机组稳定运行，并且通过改进检修方式，减少故障检修时间，降低检修劳动强度。     

Composite and non-composite behaviors of foam-insulated concrete sandwich panels

The structural behaviors of foam-insulated concrete sandwich panels subjected to uniform pressure have been evaluated. This study showed that the interface conditions such as composite and non-composite had a significant effect on the response of foam-insulated concrete sandwich panels, indicating that the simulated shear tie resistance should indeed be incorporated in numerical analyses. Finite element models were developed to simulate the detailed shear resistance of connectors and the nonlinear behaviors of concrete, foam and rebar components. The models were then validated using data from static tests performed at the University of Missouri. The modeling approach used here was compatible with the American Concrete Institute (ACI) Code and existing design practices. The results of this study will therefore provide improved methodology for the analysis and design of foam-insulated sandwich panels under both static and blast loadings.